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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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NSVMMBT5550LT1G
NSVMMBT5550LT1G
GP BJT NSVMMBT5550LT1G
onsemi
NSVMMBT5550LT1G
--
Diodes, Transistors and Thyristors
GP BJT
NSVMMBT5550LT1G.pdf
Specification
Product AttributeAttribute Value
PPAPYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingSurface Mount
PackagingTape and Reel
Pin Count3
AutomotiveYes
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Minimum DC Current Gain20@50mA@5V|60@10mA@5V|60@1mA@5V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.6
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)160
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)140
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.2@5mA@50mA|1@1mA@10mA
Maximum Collector-Emitter Saturation Voltage (V)0.25@5mA@50mA|0.15@1mA@10mA
Description
Trans GP BJT NPN 140V 0.6A 300mW Automotive 3-Pin SOT-23 T/R
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