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NSVMMBT5551M3T5G
NSVMMBT5551M3T5G
GP BJT NSVMMBT5551M3T5G
onsemi
NSVMMBT5551M3T5G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPYes
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeFlat
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width0.8
Package Height0.5
Package Length1.2
Product CategoryBipolar Small Signal
Supplier PackageSOT-723
Standard Package NameSOT
Minimum DC Current Gain80@1mA@5V|80@10mA@5V|30@50mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)640
Maximum DC Collector Current (A)0.06
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)180
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)160
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1@1mA@10mA|1@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V)0.15@1mA@10mA|0.2@5mA@50mA
Description
Trans GP BJT NPN 160V 0.06A 640mW Automotive 3-Pin SOT-723 T/R
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