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NSVMMBT6520LT1G
NSVMMBT6520LT1G
GP BJT NSVMMBT6520LT1G
onsemi
NSVMMBT6520LT1G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPYes
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width1.3
Package Height0.94
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT
Minimum DC Current Gain20@1mA@10V|30@10mA@10V|30@30mA@10V|20@50mA@10V|15@100mA@10V
Maximum Base Current (A)0.25
Number of Elements per Chip1
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)350
Maximum Transition Frequency (MHz)200
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)350
Maximum Collector Cut-Off Current (nA)50
Maximum Base Emitter Saturation Voltage (V)0.75@1mA@10mA|0.85@2mA@20mA|0.9@3mA@30mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@1mA@10mA|0.35@2mA@20mA|0.5@3mA@30mA|1@5mA@50mA
Description
Trans GP BJT PNP 350V 0.5A 300mW Automotive 3-Pin SOT-23 T/R
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