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NSVT65010MW6T1G
NSVT65010MW6T1G
GP BJT NSVT65010MW6T1G
onsemi
NSVT65010MW6T1G
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPYes
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
PCB changed6
Part StatusActive
ConfigurationDual
Package Width1.25
Package Height0.9
Package Length2
Product CategoryBipolar Small Signal
Supplier PackageSC-88
Standard Package NameSC
Minimum DC Current Gain220@2mA@5V
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)380
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)-55 to 150
Maximum Collector-Emitter Voltage (V)65
Maximum Collector Cut-Off Current (nA)15
Maximum Base Emitter Saturation Voltage (V)0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@0.5mA@10mA|0.65@5mA@100mA
Description
Trans GP BJT PNP 65V 0.1A 380mW Automotive 6-Pin SC-88 T/R
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