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NZT753
NZT753
GP BJT NZT753
onsemi
NZT753
--
Diodes, Transistors and Thyristors
GP BJT
NZT753.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.69(Max)
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain70@50mA@2V|100@500mA@2V|55@1A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1200
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)120
Maximum Transition Frequency (MHz)75(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)1.25@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.3@50mA@1A
Description
Trans GP BJT PNP 100V 4A 1200mW 4-Pin(3+Tab) SOT-223 T/R
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