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GP BJT PBSS303ND,115
Nexperia
PBSS303ND,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Single Quad Collector |
| Package Width | 1.7(Max) |
| Package Height | 1(Max) |
| Package Length | 3.1(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | TSOP |
| Minimum DC Current Gain | 345@0.5A@2V|315@1A@2V|250@2A@2V|120@3A@2V|60@4A@2V|35@5A@2V|20@6A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2500 |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Transition Frequency (MHz) | 140(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 0.88@50mA@0.5A|0.89@50mA@1A|0.92@100mA@1A|0.99@150mA@3A|1.02@300mA@3A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.105@50mA@1A|0.18@200mA@2A|0.28@150mA@3A|0.26@300mA@3A|0.34@400mA@4A|0.425@0.5A@5A|0.515@0.6A@6A|0.055@50mA@0.5A |
| Description |
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