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GP BJT PBSS303NX,115
Nexperia
PBSS303NX,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | Yes |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single Dual Collector |
| Package Width | 2.6(Max) |
| Package Height | 1.6(Max) |
| Package Length | 4.6(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-89 |
| Minimum DC Current Gain | 300@0.5A@2V|300@1A@2V|250@2A@2V|200@4A@2V|180@6A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2100 |
| Maximum DC Collector Current (A) | 5.1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 30 |
| Maximum Transition Frequency (MHz) | 130(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Base Emitter Saturation Voltage (V) | 0.09@100mA@1A|1.05@400mA@4A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.03@50mA@0.5A|0.06@50mA@1A|0.09@10mA@1A|0.11@40mA@2A|0.175@200mA@4A|0.17@400mA@4A|0.25@40mA@4A|0.22@255mA@5.1A |
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