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GP BJT PBSS3540M,315
Nexperia
PBSS3540M,315
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| SVHC | Yes |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 0.62(Max) |
| Package Height | 0.47(Max) |
| Package Length | 1.02(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | DFN |
| Minimum DC Current Gain | 200@10mA@2V|150@100mA@2V|40@500mA@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 430 |
| Maximum DC Collector Current (A) | 0.5 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Transition Frequency (MHz) | 300(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@50mA@500mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.05@0.5mA@10mA|0.13@5mA@100mA|0.2@10mA@200mA|0.35@50mA@500mA |
| Description |
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