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GP BJT PBSS4032ND,115
Nexperia
PBSS4032ND,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 1.7(Max) |
| Package Height | 1(Max) |
| Package Length | 3.1(Max) |
| Product Category | Bipolar Power |
| Supplier Package | TSOP |
| Minimum DC Current Gain | 60@6A@2V|300@1A@2V|250@2A@2V|120@4A@2V|300@500mA@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1000 |
| Maximum DC Collector Current (A) | 3.5 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 30 |
| Maximum Transition Frequency (MHz) | 135(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@300mA@3A|0.9@100mA@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.22@10mA@1A|0.25@40mA@2A|0.25@300mA@3A|0.1@50mA@500mA|0.155@50mA@1A|300@400mA@4A |
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