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GP BJT PBSS4032PT,215
Nexperia
PBSS4032PT,215
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| SVHC | Yes |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 1.4(Max) |
| Package Height | 1(Max) |
| Package Length | 3(Max) |
| Product Category | Bipolar Power |
| Supplier Package | SOT-23 |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 200@500mA@2V|150@1A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 1100 |
| Maximum DC Collector Current (A) | 2.4 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 30 |
| Maximum Transition Frequency (MHz) | 160(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1.05@200mA@2A|0.95@100mA@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.23@50mA@1A|0.375@10mA@1A|0.33@200mA@2A|0.15@50mA@500mA |
| Description |
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