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PBSS4032SN,115
PBSS4032SN,115
GP BJT PBSS4032SN,115
Nexperia
PBSS4032SN,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
ConfigurationDual Dual Collector
Package Width4(Max)
Package Height1.45(Max)
Package Length5(Max)
Product CategoryBipolar Small Signal
Supplier PackageSO
Minimum DC Current Gain150@6A@2V|200@4A@2V|250@2A@2V|300@1A@2V|300@500mA@2V
Number of Elements per Chip2
Maximum Power Dissipation (mW)2300
Maximum DC Collector Current (A)5.7
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)140(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)30
Maximum Base Emitter Saturation Voltage (V)1.05@400mA@4A|0.9@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.18@10mA@1A|0.125@50mA@1A|0.45@300mA@6A|0.375@40mA@4A|0.25@400mA@4A|0.21@40mA@2A
Description
Trans GP BJT NPN 30V 5.7A 2300mW 8-Pin SO T/R
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