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PBSS4112PANP,115
PBSS4112PANP,115
GP BJT PBSS4112PANP,115
Nexperia
PBSS4112PANP,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
TypeNPN|PNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
PCB changed6
Part StatusActive
ConfigurationDual Dual Collector
Package Width2.1(Max)
Package Height0.61(Max)
Package Length2.1(Max)
Product CategoryBipolar Small Signal
Supplier PackageHUSON EP
Minimum DC Current Gain240@100mA@2V|60@500mA@2V|50@500mA@2V|15@1A@2V@PNP|30@1A@2V@NPN|190@100mA@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip2
Maximum Power Dissipation (mW)1450
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)120
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)120
Maximum Base Emitter Saturation Voltage (V)1@50mA@500mA|1.1@100mA@1A@PNP|1.1@100mA@1A@NPN|1.1@50mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.12@50mA@500mA|0.26@50mA@1A|0.22@100mA@1A@NPN|0.22@50mA@500mA|0.48@100mA@1A@PNP
Description
Trans GP BJT NPN/PNP 120V 1A 1450mW Automotive 6-Pin HUSON EP T/R
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