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GP BJT PBSS4160PANP,115
Nexperia
PBSS4160PANP,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| SVHC | Yes |
| Type | NPN|PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual Dual Collector |
| Package Width | 2.1(Max) |
| Package Height | 0.61(Max) |
| Package Length | 2.1(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | HUSON EP |
| Minimum DC Current Gain | 290@100mA@2V|150@500mA@2V|70@1A@2V@NPN|120@500mA@2V|170@100mA@2V|70@1A@2V@PNP |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 60 |
| Maximum Transition Frequency (MHz) | 125(Typ)@PNP|175(Typ)@NPN |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1@50mA@500mA|1.1@50mA@1A|1.1@100mA@1A@NPN|1@50mA@1A|1.1@100mA@1A@PNP |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.24@50mA@1A|0.12@50mA@500mA|0.22@100mA@1A@NPN|0.55@50mA@1A|0.34@100mA@1A@PNP|0.18@50mA@500mA |
| Description |
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