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GP BJT PBSS4220V,115
Nexperia
PBSS4220V,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| PCB changed | 6 |
| Part Status | Obsolete |
| Configuration | Single Quad Collector |
| Package Width | 1.3(Max) |
| Package Height | 0.6(Max) |
| Package Length | 1.7(Max) |
| Product Category | Bipolar Power |
| Supplier Package | SOT-666 |
| Minimum DC Current Gain | 200@1A@2V|220@1mA@2V|220@100mA@2V|220@500mA@2V|120@2A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 900 |
| Maximum DC Collector Current (A) | 2 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 20 |
| Maximum Transition Frequency (MHz) | 210(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@50mA@1A|1.2@100mA@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.355@100mA@2A|0.35@200mA@2A|0.055@1mA@100mA|0.095@50mA@500mA|0.18@50mA@1A|0.175@100mA@1A |
| Description |
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