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PBSS4260PAN,115
PBSS4260PAN,115
GP BJT PBSS4260PAN,115
Nexperia
PBSS4260PAN,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveYes
PCB changed6
Part StatusActive
ConfigurationDual Dual Collector
Package Width2.1(Max)
Package Height0.61(Max)
Package Length2.1(Max)
Product CategoryBipolar Small Signal
Supplier PackageHUSON EP
Minimum DC Current Gain290@100mA@2V|210@500mA@2V|120@1A@2V|50@2A@2V
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)140(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1@50mA@500mA|1@50mA@1A|1.1@100mA@2A|1.2@200mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.09@50mA@500mA|0.18@50mA@1A|0.35@100mA@2A|0.33@200mA@2A
Description
Trans GP BJT NPN 60V 2A 2000mW Automotive 6-Pin HUSON EP T/R
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