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PBSS4310PAS-QX
PBSS4310PAS-QX
GP BJT PBSS4310PAS-QX
Nexperia
PBSS4310PAS-QX
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width2.1(Max)
Package Height0.61(Max)
Package Length2.1(Max)
Product CategoryBipolar Power
Supplier PackageDFN-D EP
Minimum DC Current Gain250@3A@2V|275@2A@2V|300@1A@2V|325@500mA@2V|325@100mA@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1540
Maximum DC Collector Current (A)3
Maximum Emitter Base Voltage (V)8
Maximum Collector Base Voltage (V)10
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Operating Junction Temperature (°C)175
Maximum Collector-Emitter Voltage (V)10
Maximum Base Emitter Saturation Voltage (V)1@100mA@1A|1.2@300mA@3A
Maximum Collector-Emitter Saturation Voltage (V)0.11@30mA@3A|0.09@150mA@A|0.085@20mA@2A|0.055@10mA@1A|0.035@50mA@1A|0.025@50mA@500mA
Description
Trans GP BJT NPN 10V 3A 1540mW 3-Pin DFN-D EP T/R
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