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PBSS5160QAZ
PBSS5160QAZ
GP BJT PBSS5160QAZ
NXP
PBSS5160QAZ
--
Diodes, Transistors and Thyristors
GP BJT
PBSS5160QAZ.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width1
Package Height0.36(Max)
Package Length1.1
Product CategoryBipolar Small Signal
Supplier PackageDFN-D EP
Minimum DC Current Gain160@100mA@2V|120@500mA@2V|85@1A@2V
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)60
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1@50mA@500mA|1.05@50mA@1A|1.1@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.19@50mA@500mA|0.46@50mA@1A|0.33@100mA@1A
Description
Trans GP BJT PNP 60V 1A 1000mW Automotive 3-Pin DFN-D EP T/R
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