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GP BJT PBSS5320D,115
Nexperia
PBSS5320D,115
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| SVHC | Yes |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Single Quad Collector |
| Package Width | 1.7(Max) |
| Package Height | 1(Max) |
| Package Length | 3.1(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | TSOP |
| Minimum DC Current Gain | 200@100mA@2V|200@500mA@2V|200@1000mA@2V|150@2000mA@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 750 |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 20 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 20 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@200mA@2A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.13@5mA@500mA|0.08@50mA@500mA|0.16@50mA@1A|0.25@200mA@2A|0.4@300mA@3A|0.4@20mA@2A |
| Description |
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