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PBSS5630PA,115
PBSS5630PA,115
GP BJT PBSS5630PA,115
Nexperia
PBSS5630PA,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypePNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width2
Package Height0.61(Max)
Package Length2
Product CategoryBipolar Small Signal
Supplier PackageHUSON
Minimum DC Current Gain230@0.5A@2V|220@1A@2V|190@2A@2V|110@6A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Maximum DC Collector Current (A)6
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)30
Maximum Transition Frequency (MHz)80(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)30
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)0.9@10mA@1A|1.1@300mA@6A
Maximum Collector-Emitter Saturation Voltage (V)0.04@50mA@0.5A|0.08@50mA@1A|0.13@10mA@1A|0.21@20mA@2A|0.325@30mA@3A|0.23@400mA@4A|0.35@300mA@6A
Description
Trans GP BJT PNP 30V 6A 2100mW 3-Pin HUSON T/R
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