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GP BJT PBSS8110X,135
Nexperia
PBSS8110X,135
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | Yes |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single Dual Collector |
| Package Width | 2.6(Max) |
| Package Height | 1.6(Max) |
| Package Length | 4.6(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-89 |
| Minimum DC Current Gain | 150@1mA@10V|150@250mA@10V|100@500mA@10V|80@1A@10V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 120 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1.05@100mA@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.04@10mA@100mA|0.12@50mA@500mA|0.2@100mA@1A |
| Description |
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