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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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PBSS8510PA,115
PBSS8510PA,115
GP BJT PBSS8510PA,115
Nexperia
PBSS8510PA,115
--
Diodes, Transistors and Thyristors
GP BJT
PBSS8510PA,115.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width2
Package Height0.61(Max)
Package Length2
Product CategoryBipolar Power
Supplier PackageHUSON
Minimum DC Current Gain180@0.5A@2V|150@1A@2V|95@2A@2V|30@6A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Maximum DC Collector Current (A)5.2
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)150(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Base Emitter Saturation Voltage (V)0.9@10mA@1A|1.1@260mA@5.2A
Maximum Collector-Emitter Saturation Voltage (V)0.04@50mA@0.5A|0.075@50mA@1A|0.34@260mA@5.2A|0.16@10mA@1A|0.22@400mA@4A
Description
Trans GP BJT NPN 100V 5.2A 2100mW 3-Pin HUSON T/R
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