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GP BJT PBSS9110Y,115
Nexperia
PBSS9110Y,115
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| SVHC | Yes |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 1.35(Max) |
| Package Height | 1(Max) |
| Package Length | 2.2(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | TSSOP |
| Minimum DC Current Gain | 125@1A@5V|150@500mA@5V|150@250mA@5V|150@1mA@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 625 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 120 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@100mA@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.32@100mA@1A|0.18@50mA@500mA|0.12@25mA@250mA |
| Description |
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