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PHE13003A,126
PHE13003A,126
GP BJT PHE13003A,126
NXP
PHE13003A,126
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
PPAPUnknown
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingAmmo
Pin Count3
AutomotiveUnknown
Lead ShapeFormed
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width4.2(Max)
Package Height5.2(Max)
Package Length4.8(Max)
Product CategoryBipolar Power
Supplier PackageTO-92
Minimum DC Current Gain10@0.4A@5V|5@0.8A@5V|12@0.5mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)9
Maximum Collector Base Voltage (V)700
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)400
Maximum Base Emitter Saturation Voltage (V)1@50mA@0.25A|1.2@125mA@0.5A
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@0.25A|1@125mA@0.5A|1.5@250mA@0.75A
Description
Trans GP BJT NPN 400V 1A 2100mW 3-Pin TO-92 Ammo
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