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PHPT61002NYCX
PHPT61002NYCX
GP BJT PHPT61002NYCX
Nexperia
PHPT61002NYCX
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
PCB changed4
Part StatusActive
ConfigurationSingle Triple Emitter
Package Width4.1(Max)
Package Height1.1(Max)
Package Length5(Max)
Product CategoryBipolar Power
Supplier PackageLFPAK
SVHC Exceeds ThresholdYes
Minimum DC Current Gain80@1A@10V|20@2A@10V|10@3A@10V|100@500mA@1.5V|150@500mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)25000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)100
Maximum Transition Frequency (MHz)140(Typ)
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1@50mA@1A|1.2@200mA@2A
Maximum Collector-Emitter Saturation Voltage (V)0.075@50mA@0.5A|0.3@200mA@2A
Description
Trans GP BJT NPN 100V 2A 25000mW 5-Pin(4+Tab) LFPAK T/R
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