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GP BJT PMBT3906/DG,215
NXP
PMBT3906/DG,215
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| Type | PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 1.4(Max) |
| Package Height | 1(Max) |
| Package Length | 3(Max) |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 30@100mA@1V|60@50mA@1V|100@10mA@1V|80@1mA@1V|60@0.1mA@1V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 250 |
| Maximum DC Collector Current (A) | 0.2 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 40 |
| Maximum Transition Frequency (MHz) | 250(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | 150 |
| Maximum Collector-Emitter Voltage (V) | 40 |
| Maximum Collector Cut-Off Current (nA) | 50 |
| Maximum Base Emitter Saturation Voltage (V) | 0.95@5mA@50mA|0.85@1mA@10mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@5mA@50mA|0.25@1mA@10mA |
| Description |
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