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PMD9010D,115
PMD9010D,115
GP BJT PMD9010D,115
NXP
PMD9010D,115
--
Diodes, Transistors and Thyristors
GP BJT
PMD9010D,115.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusObsolete
ConfigurationDual
Package Width1.7(Max)
Package Height1(Max)
Package Length3.1(Max)
Product CategoryBipolar Small Signal
Supplier PackageTSOP
Minimum DC Current Gain200@1mA@5V@TR 1|200@1mA@5V|95@100mA@5V|24@200mA@5V@TR 2
Number of Elements per Chip2
Maximum Power Dissipation (mW)400
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)5@TR 1
Maximum Collector Base Voltage (V)50
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)45
Maximum Base Emitter Saturation Voltage (V)0.7(Typ)@0.5mA@10mA@TR 1|0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA@TR 2
Maximum Collector-Emitter Saturation Voltage (V)0.2@0.5mA@10mA@TR 1|0.2@0.5mA@10mA|0.4@5mA@100mA|0.5@20mA@200mA@TR 2
Description
Trans GP BJT NPN 45V 0.1A 400mW 6-Pin TSOP T/R
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