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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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SMBTA56E6327HTSA1
SMBTA56E6327HTSA1
GP BJT SMBTA56E6327HTSA1
Infineon
SMBTA56E6327HTSA1
--
Diodes, Transistors and Thyristors
GP BJT
SMBTA56E6327HTSA1.pdf
Specification
Product AttributeAttribute Value
PPAPUnknown
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed3
Part StatusLTB
ConfigurationSingle
Package Width1.3
Package Height1(Max)
Package Length2.9
Product CategoryBipolar Small Signal
Supplier PackageSOT-23
Standard Package NameSOT-23
Minimum DC Current Gain100@100mA@1V|100@10mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)330
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)4
Maximum Collector Base Voltage (V)80
Maximum Transition Frequency (MHz)100(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)80
Maximum Collector-Emitter Saturation Voltage (V)0.25@10mA@100mA
Description
Trans GP BJT PNP 80V 0.5A 330mW Automotive 3-Pin SOT-23 T/R
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