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ST13003DN
ST13003DN
GP BJT ST13003DN
STMicroelectronics
ST13003DN
--
Diodes, Transistors and Thyristors
GP BJT
ST13003DN.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.7(Max)
Package Height10.8(Max)
Package Length7.8(Max)
Product CategoryBipolar Power
Supplier PackageSOT-32
Standard Package NameTO-126
SVHC Exceeds ThresholdYes
Minimum DC Current Gain6@0.5A@2V|5@1A@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)20000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)400
Maximum Base Emitter Saturation Voltage (V)1.2@125mA@0.5A|1.3@330mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.7@125mA@0.5A|1.2@330mA@1A
Description
Trans GP BJT NPN 400V 1A 20000mW 3-Pin(3+Tab) SOT-32 Bag
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