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STBV45
STBV45
GP BJT STBV45
STMicroelectronics
STBV45
--
Diodes, Transistors and Thyristors
GP BJT
STBV45.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBag
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.94(Max)
Package Height4.95(Max)
Package Length4.95(Max)
Product CategoryBipolar Small Signal
Supplier PackageTO-92
Standard Package NameTO-92
Minimum DC Current Gain12@0.5mA@2V|10@0.2A@5V|5@0.4A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)950
Maximum DC Collector Current (A)0.75
Maximum Emitter Base Voltage (V)9
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)400
Maximum Base Emitter Saturation Voltage (V)1@40mA@0.2A|1.2@75mA@0.3A
Maximum Collector-Emitter Saturation Voltage (V)0.5@40mA@0.2A|1@75mA@0.3A|1.5@135mA@0.4A
Description
Trans GP BJT NPN 400V 0.75A 950mW 3-Pin TO-92 Bag
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