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GP BJT STD830CP40
STMicroelectronics
STD830CP40
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN|PNP |
| EU RoHS | Compliant |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 8 |
| Part Status | Obsolete |
| Configuration | Dual Dual Collector |
| Package Width | 6.45(Max) |
| Package Height | 3.5(Max) |
| Package Length | 9.3(Max) |
| Product Category | Bipolar Power |
| Supplier Package | PDIP |
| Standard Package Name | DIP |
| Minimum DC Current Gain | 10@10mA@5V|18@0.7A@5V|4@2A@5V |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 3000 |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 10@NPN|5@PNP |
| Maximum Collector Base Voltage (V) | 700@NPN|500@PNP |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 400 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@0.1A@0.5A|1.2@0.2A@1A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@0.1A@0.7A|0.5@0.2A@1A |
| Description |
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