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GP BJT STT13005-H
STMicroelectronics
STT13005-H
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Obsolete |
| Configuration | Single |
| Package Width | 2.9(Max) |
| Package Height | 11.05(Max) |
| Package Length | 7.8(Max) |
| Product Category | Bipolar Power |
| Supplier Package | SOT-32 |
| Minimum DC Current Gain | 10@0.5A@5V|8@2A@5V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 45000 |
| Maximum DC Collector Current (A) | 2 |
| Maximum Emitter Base Voltage (V) | 9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 400 |
| Maximum Base Emitter Saturation Voltage (V) | 1@125mA@0.5A|1.3@0.2A@0.8A|1.5@0.4A@1.6A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5@125mA@0.5A|1@0.2A@0.8A|1.5@0.4A@1.6A |
| Description |
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