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TIPL760C-S
TIPL760C-S
GP BJT TIPL760C-S
Bourns
TIPL760C-S
--
Diodes, Transistors and Thyristors
GP BJT
TIPL760C-S.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width4.7(Max)
Package Height8.72(Max)
Package Length10.4(Max)
Product CategoryBipolar Power
Supplier PackageTO-220
Standard Package NameTO-220
Minimum DC Current Gain20@0.5A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)75000
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)10
Maximum Collector Base Voltage (V)1200
Maximum Transition Frequency (MHz)12(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Collector-Emitter Voltage (V)550
Maximum Base Emitter Saturation Voltage (V)1.2@0.4A@2A|1.4@0.6A@3A
Maximum Collector-Emitter Saturation Voltage (V)2.5@0.6A@3A
Description
Trans GP BJT NPN 550V 4A 3-Pin(3+Tab) TO-220
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