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ZTX553STZ
ZTX553STZ
GP BJT ZTX553STZ
Diodes Incorporated
ZTX553STZ
--
Diodes, Transistors and Thyristors
GP BJT
ZTX553STZ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width2.28
Package Height3.9
Package Length4.57
Product CategoryBipolar Power
Supplier PackageE-Line
Standard Package NameTO-92
Minimum DC Current Gain40@150mA@10V|10@1A@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)120
Maximum Transition Frequency (MHz)150(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.1@15mA@150mA
Maximum Collector-Emitter Saturation Voltage (V)0.25@15mA@150mA
Description
Trans GP BJT PNP 100V 1A 1000mW 3-Pin E-Line Box
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