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ZTX649
ZTX649
GP BJT ZTX649
Diodes Incorporated
ZTX649
--
Diodes, Transistors and Thyristors
GP BJT
ZTX649.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width2.28
Package Height3.9
Package Length4.57
Product CategoryBipolar Power
Supplier PackageE-Line
Standard Package NameTO-92
Minimum DC Current Gain15@6A@2V|75@2A@2V|70@50mA@2V|100@1A@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)35
Maximum Transition Frequency (MHz)240(Typ)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)25
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.25@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.3@100mA@1A|0.5@200mA@2A
Description
Trans GP BJT NPN 25V 2A 1000mW 3-Pin E-Line
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