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ZTX655
ZTX655
GP BJT ZTX655
Diodes Incorporated
ZTX655
--
Diodes, Transistors and Thyristors
GP BJT
ZTX655.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width2.28
Package Height3.9
Package Length4.57
Product CategoryBipolar Power
Supplier PackageE-Line
Standard Package NameTO-92
SVHC Exceeds ThresholdYes
Minimum DC Current Gain50@10mA@5V|50@500mA@5V|20@1A@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)1
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)150
Maximum Transition Frequency (MHz)30(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)150
Maximum Base Emitter Saturation Voltage (V)1.1@50mA@500mA
Maximum Collector-Emitter Saturation Voltage (V)0.5@50mA@500mA|0.5@200mA@1A
Description
Trans GP BJT NPN 150V 1A 1000mW 3-Pin E-Line
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