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ZTX658STZ
ZTX658STZ
GP BJT ZTX658STZ
Diodes Incorporated
ZTX658STZ
--
Diodes, Transistors and Thyristors
GP BJT
ZTX658STZ.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeNPN
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width2.28
Package Height3.9
Package Length4.57
Product CategoryBipolar Power
Supplier PackageE-Line
Standard Package NameTO-92
Minimum DC Current Gain50@100mA@5V|50@1mA@5V|40@200mA@10V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)400
Maximum Transition Frequency (MHz)50(Min)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)400
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)0.9@10mA@100mA
Maximum Collector-Emitter Saturation Voltage (V)0.3@1mA@20mA|0.25@5mA@50mA|0.5@10mA@100mA
Description
Trans GP BJT NPN 400V 0.5A 1000mW 3-Pin E-Line Box
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