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ZTX749A
ZTX749A
GP BJT ZTX749A
onsemi
ZTX749A
--
Diodes, Transistors and Thyristors
GP BJT
ZTX749A.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPNo
TypePNP
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingBulk
Pin Count3
AutomotiveNo
PCB changed3
Part StatusObsolete
ConfigurationSingle
Package Width3.93(Max)
Package Height7.87(Max)
Package Length4.7(Max)
Product CategoryBipolar Power
Supplier PackageTO-226
Minimum DC Current Gain100@1A@2V|75@2A@2V|15@6A@2V|70@50mA@2V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)45
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)35
Maximum Base Emitter Saturation Voltage (V)1.25@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.3@100mA@1A|0.5@200mA@2A
Description
Trans GP BJT PNP 35V 2A 3-Pin TO-226 Bulk
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