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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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ZTX753STZ:LEADED
ZTX753STZ:LEADED
GP BJT ZTX753STZ:LEADED
Diodes Incorporated
ZTX753STZ:LEADED
--
Diodes, Transistors and Thyristors
GP BJT
ZTX753STZ:LEADED.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingBox
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width2.28
Package Height3.9
Package Length4.57
Product CategoryBipolar Power
Supplier PackageE-Line
Standard Package NameTO-92
Number of Elements per Chip1
Maximum Power Dissipation (mW)1000
Maximum DC Collector Current (A)2
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)120
Maximum Transition Frequency (MHz)140(Typ)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)100
Maximum Collector Cut-Off Current (nA)100
Maximum Base Emitter Saturation Voltage (V)1.25@100mA@1A
Maximum Collector-Emitter Saturation Voltage (V)0.3@100mA@1A|0.5@200mA@2A
Description
Trans GP BJT PNP 100V 2A 1000mW 3-Pin E-Line Box
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