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ZTX855
ZTX855
GP BJT ZTX855
Diodes Incorporated
ZTX855
--
Diodes, Transistors and Thyristors
GP BJT
ZTX855.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
ConfigurationSingle
Package Width2.28
Package Height3.9
Package Length4.57
Product CategoryBipolar Power
Supplier PackageE-Line
Standard Package NameTO-92
SVHC Exceeds ThresholdYes
Minimum DC Current Gain100@1A@5V|35@4A@5V|100@10mA@5V
Number of Elements per Chip1
Maximum Power Dissipation (mW)1200
Maximum DC Collector Current (A)4
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)250
Maximum Transition Frequency (MHz)90(Typ)
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)150
Maximum Base Emitter Saturation Voltage (V)1.1@400mA@4A
Maximum Collector-Emitter Saturation Voltage (V)0.04@5A@100mA|0.06@50mA@500mA|0.1@100mA@1A|0.26@400mA@4A
Description
Trans GP BJT NPN 150V 4A 1200mW 3-Pin E-Line
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