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GP BJT ZXTC2061E6TA
Diodes Incorporated
ZXTC2061E6TA
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | PNP|NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual |
| Package Width | 1.8(Max) |
| Package Height | 1.3(Max) |
| Package Length | 3.1(Max) |
| Product Category | Bipolar Power |
| Supplier Package | SOT-23 |
| Standard Package Name | SOT-23 |
| Minimum DC Current Gain | 500@10mA@2V|480@1A@2V|260@5A@2V@NPN|290@1A@2V|75@3.5A@2V@PNP |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1700 |
| Maximum DC Collector Current (A) | 5@NPN|3.5@PNP |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 20@NPN|12@PNP |
| Maximum Transition Frequency (MHz) | 260(Typ)@NPN|310(Typ)@PNP |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 12 |
| Maximum Base Emitter Saturation Voltage (V) | 1@100mA@5A@NPN|1.05@350mA@3.5A@PNP |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.04@100mA@1A|0.06@10mA@1A|0.08@40mA@2A|0.18@100mA@5A@NPN|0.07@100mA@1A|0.265@10mA@1A|0.36@40mA@2A|0.2@350mA@3.5A@PNP |
| Description |
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