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GP BJT ZXTC4591AMCQTA
Diodes Incorporated
ZXTC4591AMCQTA
--
Diodes, Transistors and Thyristors
GP BJT
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
PPAPYes
TypeNPN|PNP
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveYes
PCB changed8
Part StatusActive
ConfigurationDual Dual Collector
Package Width2
Package Height0.78
Package Length3
Product CategoryBipolar Power
Supplier PackageWDFN EP
Minimum DC Current Gain300@1mA@5V|300@500mA@1V|200@1A@5V|35@2A@5V@NPN|300@100mA@5V|250@500mA@5V|160@1A@5V|30@2A@5V@PNP
Number of Elements per Chip2
Maximum Power Dissipation (mW)2450
Maximum DC Collector Current (A)2.5@NPN|2@PNP
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)40
Maximum Transition Frequency (MHz)150(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)40
Maximum Base Emitter Saturation Voltage (V)1.1@0.1A@1A@NPN|1.1@50mA@1A@PNP
Maximum Collector-Emitter Saturation Voltage (V)0.3@50mA@0.5A|0.5@0.1A@1A@NPN|0.2@1mA@0.1A|0.35@20mA@0.5A|0.5@100mA@1A@PNP
Description
Trans GP BJT NPN/PNP 40V 2.5A/2A 2450mW Automotive 8-Pin WDFN EP T/R
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