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GP BJT ZXTD4591E6TA
Diodes Incorporated
ZXTD4591E6TA
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Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN|PNP |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual |
| Package Width | 1.8(Max) |
| Package Height | 1.3(Max) |
| Package Length | 3.1(Max) |
| Product Category | Bipolar Power |
| Supplier Package | SOT-23 |
| Standard Package Name | SOT-23 |
| Minimum DC Current Gain | 100@500mA@5V|80@1A@5V|100@1mA@5V|30@2A@5V@NPN|15@2A@5V@PNP |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1700 |
| Maximum DC Collector Current (A) | 1 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 180(Min)@NPN|150(Min)@PNP |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@100mA@1A@NPN|1.2@100mA@1A@PNP |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@50mA@500mA|0.5@100mA@1A@NPN|0.3@50mA@500mA|0.6@100mA@1A@PNP |
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