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GP BJT ZXTD6717E6QTA
Diodes Incorporated
ZXTD6717E6QTA
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | Yes |
| Type | NPN|PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual |
| Package Width | 1.6 |
| Package Height | 1.1 |
| Package Length | 3 |
| Product Category | Bipolar Power |
| Supplier Package | SOT-26 |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 30@5A@2V@NPN|300@100mA@2V|200@10mA@2V|250@500mA@2V|200@1A@2V|75@3A@2V|300@10mA@2V|200@500mA@2V|125@1.25A@2V|75@2A@2V|30@3A@2V@PNP |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1700 |
| Maximum DC Collector Current (A) | 1.5@NPN|1.25@PNP |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 15@NPN|12@PNP |
| Maximum Transition Frequency (MHz) | 180(Typ)@NPN|220(Typ)@PNP |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 15@NPN|12@PNP |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@20mA@1.5A@NPN|1.1@100mA@1.25A@PNP |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.04@10mA@100mA|0.1@10mA@250mA|0.175@10mA@500mA|0.215@50mA@1A|0.24@100mA@1.25A@PNP|0.055@10mA@250mA|0.1@10mA@500mA|0.2@10mA@1A|0.245@20mA@1.5A@NPN|0.02@10mA@100mA |
| Description |
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