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GP BJT ZXTDA1M832TA
Diodes Incorporated
ZXTDA1M832TA
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN|PNP |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Obsolete |
| Configuration | Dual Dual Collector |
| Package Width | 2 |
| Package Height | 1(Max) |
| Package Length | 3 |
| Product Category | Bipolar Power |
| Supplier Package | MLP |
| Minimum DC Current Gain | 200@10mA@2V|300@200mA@2V|200@3A@2V|150@5A@2V@NPN|300@10mA@2V|300@100mA@2V|180@2.5A@2V|60@8A@2V|45@10A@2V@PNP |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 3000 |
| Maximum DC Collector Current (A) | 5@NPN|4.4@PNP |
| Maximum Emitter Base Voltage (V) | 7.5 |
| Maximum Collector Base Voltage (V) | 40@NPN|20@PNP |
| Maximum Transition Frequency (MHz) | 120(Typ)@NPN|110(Typ)@PNP |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Collector-Emitter Voltage (V) | 15@NPN|12@PNP |
| Maximum Base Emitter Saturation Voltage (V) | 1@50mA@4.5A@NPN|1.05@150mA@4A@PNP |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.014@10mA@0.1A|0.1@10mA@1A|0.2@50mA@3A|0.28@50mA@4.5A@NPN|0.017@10mA@0.1A|0.14@10mA@1A|0.15@50mA@1.5A|0.3@50mA@3A|0.3@150mA@4A@PNP |
| Description |
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