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GP BJT ZXTN07045EFFTA
Diodes Incorporated
ZXTN07045EFFTA
--
Diodes, Transistors and Thyristors
GP BJT
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single |
| Package Width | 1.7(Max) |
| Package Height | 1(Max) |
| Package Length | 3(Max) |
| Product Category | Bipolar Power |
| Supplier Package | SOT-23F |
| Standard Package Name | SOT-23F |
| Minimum DC Current Gain | 500@0.1A@2V|400@1A@2V|250@2A@2V|70@4A@2V |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum DC Collector Current (A) | 4 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Base Voltage (V) | 45 |
| Maximum Transition Frequency (MHz) | 190(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1@80mA@4A |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.07@0.5mA@0.1A|0.23@5mA@1A|0.08@100mA@1A|0.27@20mA@2A|0.28@80mA@4A |
| Description |
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