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ZXTN2010GTA
ZXTN2010GTA
GP BJT ZXTN2010GTA
Diodes Incorporated
ZXTN2010GTA
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Diodes, Transistors and Thyristors
GP BJT
ZXTN2010GTA.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
TypeNPN
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
Lead ShapeGull-wing
PCB changed3
Part StatusActive
ConfigurationSingle Dual Collector
Package Width3.5
Package Height1.6
Package Length6.5
Product CategoryBipolar Power
Supplier PackageSOT-223
Standard Package NameSOT
SVHC Exceeds ThresholdYes
Minimum DC Current Gain100@2A@1V|55@5A@1V|20@10A@1V|100@10mA@1V
Number of Elements per Chip1
Maximum Power Dissipation (mW)3000
Maximum DC Collector Current (A)6
Maximum Emitter Base Voltage (V)7
Maximum Collector Base Voltage (V)150
Maximum Transition Frequency (MHz)130(Typ)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)60
Maximum Collector Cut-Off Current (nA)50
Maximum Base Emitter Saturation Voltage (V)1.1@300mA@6A
Maximum Collector-Emitter Saturation Voltage (V)0.06@100mA@1A|0.07@50mA@1A|0.135@50mA@2A|0.26@300mA@6A|0.03@5mA@100mA
Description
Trans GP BJT NPN 60V 6A 3000mW 4-Pin(3+Tab) SOT-223 T/R
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