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Gate and Power Drivers 1ED3122MU12HXUMA1
Infineon
1ED3122MU12HXUMA1
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Power Management
Gate and Power Drivers
Specification
| Product Attribute | Attribute Value |
| HTS | 8542330001 |
| PPAP | No |
| Type | IGBT|MOSFET|SiCFET |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Automotive | No |
| Part Status | Active |
| Latch-Up Proof | No |
| Special Features | Under Voltage Lockout |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Driver Configuration | Inverting|Non-Inverting |
| Maximum Fall Time (ns) | 30 |
| Maximum Rise Time (ns) | 30 |
| Output Resistance (Ohm) | 0.45|0.55 |
| Peak Output Current (A) | 10(Typ) |
| Input Logic Compatibility | CMOS|3V to 15V |
| Maximum Power Dissipation (mW) | 700 |
| Maximum Operating Frequency (kHz) | 1000 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Propagation Delay Time (ns) | 90(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 15 |
| Minimum Operating Supply Voltage (V) | 3.1 |
| Typical Input Low Threshold Voltage (V) | 1.1(Max) |
| Typical Input High Threshold Voltage (V) | 2.5(Min) |
| Description |
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