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Gate and Power Drivers 1EDI2010AS
Infineon
1EDI2010AS
--
Power Management
Gate and Power Drivers
Specification
| Product Attribute | Attribute Value |
| Type | MOSFET|IGBT |
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Driver Type | Low Side|High Side |
| Part Status | Active |
| Latch-Up Proof | Yes |
| Special Features | Under Voltage Lockout |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| Driver Configuration | Non-Inverting|Inverting |
| Maximum Fall Time (ns) | 235 |
| Maximum Rise Time (ns) | 205 |
| Maximum Power Dissipation (mW) | 100 |
| Maximum Operating Frequency (kHz) | 30 |
| Maximum Operating Temperature (°C) | 125 |
| Maximum Propagation Delay Time (ns) | 255 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 18|5.5 |
| Minimum Operating Supply Voltage (V) | 13|4.65 |
| Typical Operating Supply Voltage (V) | 15|5 |
| Typical Input Low Threshold Voltage (V) | 1.65(Max) |
| Typical Input High Threshold Voltage (V) | 5.5(Max) |
| Description |
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