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1EDN7512G
1EDN7512G
Gate and Power Drivers 1EDN7512G
Infineon
1EDN7512G
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Power Management
Gate and Power Drivers
1EDN7512G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
TypeMOSFET|IGBT
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Bridge TypeHalf Bridge
Driver TypeLow Side
PCB changed6
Part StatusUnconfirmed
Package Width3
Latch-Up ProofNo
Package Height0.75(Max)
Package Length3
Special FeaturesUnder Voltage Lockout
Supplier PackageWSON EP
Number of Drivers2
Number of Outputs2
Driver ConfigurationInverting|Non-Inverting
Maximum Fall Time (ns)4.5(Typ)
Maximum Rise Time (ns)6.5(Typ)
Output Resistance (Ohm)0.35|0.85
Input Logic CompatibilityCMOS|TTL|3.3V
Maximum Operating Temperature (°C)150
Maximum Propagation Delay Time (ns)19(Typ)
Minimum Operating Temperature (°C)-40
Maximum Operating Supply Voltage (V)20
Minimum Operating Supply Voltage (V)4.5
Typical Input Low Threshold Voltage (V)1
Typical Input High Threshold Voltage (V)2.1
Description
Driver 2-OUT Low Side Half Brdg Inv/Non-Inv 6-Pin WSON EP T/R
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