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Gate and Power Drivers 2EDN7524G
Infineon
2EDN7524G
--
Power Management
Gate and Power Drivers
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| Type | IGBT|MOSFET |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Driver Type | Low Side |
| PCB changed | 8 |
| Part Status | Unconfirmed |
| Package Width | 3 |
| Latch-Up Proof | Yes |
| Package Height | 0.75(Max) |
| Package Length | 3 |
| Special Features | Current Limit|Undervoltage Lockout |
| Supplier Package | WSON EP |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Driver Configuration | Non-Inverting |
| Standard Package Name | SON |
| Maximum Fall Time (ns) | 4.5(Typ) |
| Maximum Rise Time (ns) | 5.3(Typ) |
| Output Resistance (Ohm) | 0.55|0.7 |
| Peak Output Current (A) | 5 |
| Input Logic Compatibility | LVTTL|3.3V|CMOS |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Propagation Delay Time (ns) | 19(Typ) |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Supply Voltage (V) | 20 |
| Minimum Operating Supply Voltage (V) | 4.5 |
| Typical Input Low Threshold Voltage (V) | 1.02 |
| Typical Input High Threshold Voltage (V) | 2.1 |
| Description |
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